A 6-Bit, 12.5 GS/s Comparator for High-Speed A/D Conversion in 0.35 μM SiGe BiCMOS Technology

被引：0

作者：

Yin, Kuai ^{[1
]}

Meng, Qiao ^{[1
]}

Liu, Haitao ^{[1
]}

Tang, Kai ^{[1
]}

机构：

[1] Southeast Univ, Inst RF & OE ICs, Nanjing, Jiangsu, Peoples R China

来源：

MECHANICAL ENGINEERING AND TECHNOLOGY | 2012年 / 125卷

关键词：

Analog-to-digital conversion; comparator; high-speed; SiGe BiCMOS; HBT COMPARATOR;

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This paper presents a monolithic comparator implemented in CHRT 0.35 mu m SiGe BiCMOS technology for high-speed medium-resolution flash analog-to-digital conversion. The SiGe BiCMOS process provides HBT transistors with maximum f(T) as 55 GHz. The comparator occupies a die area of 240x65 mu m(2) with a power dissipation of 54.16 mW from a 3.3-V power supply. Operating with an input frequency of I GHz, the circuit can oversample up to 12.5 GS/s with 7 bits of resolution; while operating at Nyquist, the comparator can sample up to 12.5 GS/s with 6 bits resolution. This design achieves a considerable trade-off between power, speed and resolution.

引用

页码：27 / 34

页数：8

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