Effect of ternary mixed crystals on interface optical phonons in wurtizte InxGa1-xN/GaN quantum wells

被引：9
|
作者：
Huang, Wen-Deng [1 ,2 ]
Chen, Guang-De [1 ]
Ren, Ya-Jie [2 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Sci, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Xian 710049, Peoples R China
[2] Shaanxi Univ Technol, Dept Phys, Hanzhong 723001, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 05期
基金：
中国国家自然科学基金;
关键词：
INXALYGA1-X-YN; SUPERLATTICES; ALLOYS;
D O I：
10.1063/1.4748173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of ternary mixed crystals on the interface optical phonons in wurtizte InxGa1-xN/GaN quantum wells is studied based on the modified random-element isodisplacement model and dielectric continuum model. The results show that the interface optical phonons appear different frequency range with different indium concentration. The frequencies of interface optical phonons in the high frequency range decrease almost linearly with increasing indium concentration and do not vary almost linearly in the low frequency range. The indium concentration has more important effect on the electron-phonon interaction in low frequency range. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748173]
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页数：5
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