High Performance Stacked-FETs in 0.25μm GaN Technology for S-Band Power Amplifiers

被引：0
|
作者：
van der Bent, Gijs [1 ]
de Hek, Peter [1 ]
Knight, Rob [1 ]
van Vliet, Frank E. [1 ]
机构：
[1] TNO, The Hague, Netherlands
来源：
2022 52ND EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2022年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
EuMC27-2
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页数：1
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