An S-band 34dBm Stacked-HBT Phase Driver in 0.25 μm BiCMOS Technology for GaN-Based Phased-Array Radar Transmit Chain

被引：0

作者：

Essing, J. ^{[1
]}

Bossuet, A. ^{[1
]}

Knight, R. ^{[1
]}

Hek, A. P. de ^{[1
]}

van Vliet, F. E. ^{[1
]}

机构：

[1] TNO, The Hague, Netherlands

来源：

2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021) | 2021年

关键词：

power amplifier; phase shifter; SiGe BiCMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes an integrated S-band phase-shifter driver-amplifier to drive Gallium-Nitride (GaN) based power amplifiers in a phased-array radar transmit chain. This phase driver is implemented in a 0.25 mu m SiGe BiCMOS process and packaged into a QFN5x5. By using device stacking, the phase driver achieves an output power of more than 32.5dBm (1.7W) across the band (2.6-3.4GHz), with a maximum of 34.2dBm (2.7W). The RMS phase error is less than 3.75 degrees at a 6-bit phase resolution. This enables a low-cost highly-integrated transmitter front-end for phased-array radar applications.

引用

页码：293 / 296

页数：4

共 2 条

[1] X-band GaAs Phase Driver MMIC optimized for GaN-based Phased-Array Radar Transmit Chain
van Heijningen, M.
Essing, J.
van Vliet, F. E.
2018 13TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2018, : 118 - 121
[2] Differential Low Noise Amplifier for S-Band Phased-Array Radar in 0.18-μm CMOS Technology
Hsia, Tzu-Yu
Li, Xin-Yi
Yang, Liang-Yu Ou
Tsai, Zuo-Min
Chen, Shih-Yuan
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 786 - 788

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