Scanning MOKE investigation of ion-beam-synthesized suicide films

被引:4
|
作者
Gumarov, G. G. [1 ,2 ]
Konovalov, D. A. [1 ]
Alekseev, A. V. [1 ]
Petukhov, V. Yu [1 ,2 ]
Zhikharev, V. A. [3 ]
Nuzhdin, V. I. [1 ]
Shustov, V. A. [1 ]
机构
[1] RAS, Zavoisky Phys Tech Inst, Kazan 420029, Tatarstan, Russia
[2] Kazan Fed Univ, Kazan 420008, Tatarstan, Russia
[3] Kazan State Technol Univ, Kazan 420015, Tatarstan, Russia
关键词
ion beam synthesis; Magnetic nanoparticles; Induced anisotropy; FERROMAGNETIC SILICIDE FE3SI;
D O I
10.1016/j.nimb.2011.08.056
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Fe ions with an energy of 40 keV were implanted into Si plates with the fluence varying in the range of (1.6-3.0) x 10(17) ion/cm(2) in the external magnetic field. Scanning magnetooptical Kerr effect (MOKE) studies have shown that all samples possess uniaxial anisotropy. Both the coercive field and the anisotropy field increase with fluence. It was suggested that induced anisotropy is caused by inverse magnetostriction. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:92 / 95
页数:4
相关论文
共 50 条
  • [41] Aluminum nitride films synthesized by dual ion beam sputtering
    Han, S
    Chen, HY
    Chen, CH
    Lin, JH
    Shih, HC
    JOURNAL OF MATERIALS RESEARCH, 2004, 19 (12) : 3521 - 3525
  • [42] Aluminum nitride films synthesized by dual ion beam sputtering
    Sheng Han
    Hong-Ying Chen
    Chih-Hsuan Cheng
    Jian-Hong Lin
    Han C. Shih
    Journal of Materials Research, 2004, 19 : 3521 - 3525
  • [43] Carbon nitride films synthesized by dual ion beam sputtering
    Prieto, P
    Quiros, C
    Elizalde, E
    Fernandez, A
    Martin, JM
    Sanz, JM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 122 (03): : 534 - 537
  • [44] Raman investigation of ion beam synthesized β-FeSi2
    Birdwell, AG
    Glosser, R
    Leong, DN
    Homewood, KP
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 965 - 972
  • [45] Resonant Raman scattering in ion-beam-synthesized Mg2Si in a silicon matrix -: art. no. 115330
    Baleva, M
    Zlateva, G
    Atanassov, A
    Abrashev, M
    Goranova, E
    PHYSICAL REVIEW B, 2005, 72 (11):
  • [46] NANOINDENTATION INVESTIGATION OF VO2 FILMS SYNTHESIZED BY REACTIVE BIAS TARGET ION BEAM DEPOSITION (RBTIBD)
    Mamun, M. A. L.
    Kittiwatanakul, S.
    Zhang, K.
    Baumgart, H.
    Lu, Jiwei
    Wolf, S.
    Elmustafa, A. A.
    TMS 2012 141ST ANNUAL MEETING & EXHIBITION - SUPPLEMENTAL PROCEEDINGS, VOL 2: MATERIALS PROPERTIES, CHARACTERIZATION, AND MODELING, 2012, : 753 - 758
  • [47] The Investigation of Piezoresistive, Optical and Electrical Properties of Diamond Like Carbon Films Synthesized by Ion Beam Deposition and PECVD
    Meskinis, Sarunas
    Gudaitis, Rimas
    Tamuleviciene, Asta
    Kopustinskas, Vitoldas
    Slapikas, Kestutis
    Tamulevicius, Sigitas
    MATERIALS SCIENCE-MEDZIAGOTYRA, 2010, 16 (04): : 292 - 297
  • [48] MASS-DISPERSIVE RECOIL SPECTROMETRY STUDIES OF OXYGEN AND NITROGEN REDISTRIBUTION IN ION-BEAM-SYNTHESIZED BURIED OXYNITRIDE LAYERS IN SILICON
    WHITLOW, HJ
    PETERSSON, CS
    REESON, KJ
    HEMMENT, PLF
    APPLIED PHYSICS LETTERS, 1988, 52 (22) : 1871 - 1873
  • [49] Magnetoresistance properties of ion beam synthesized granular magnetic thin films
    Wong, SP
    Chiah, MF
    Cheung, WY
    Ke, N
    Xu, JB
    Zhang, XX
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 169 : 166 - 173
  • [50] Study of boron nitride films synthesized by ion beam and vapor deposition
    Nishiyama, S
    Ebe, A
    Kuratani, N
    Iwamoto, Y
    Ogata, K
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 740 - 743