共 22 条
- [1] OXYGEN IRRADIATION EFFECT IN ION-BEAM-SYNTHESIZED ALUMINUM-OXIDE LAYERS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4): : 413 - 416
- [3] FORMATION OF BURIED SILICON-NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION-BEAM SYNTHESIS EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 427 - 429
- [4] PROPERTIES OF ION-BEAM SYNTHESIZED BURIED SILICON-NITRIDE LAYERS WITH RECTANGULAR NITROGEN PROFILES NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 285 - 289
- [6] PECULIARITIES OF BURIED SILICON OXYNITRIDE LAYER SYNTHESIS BY SEQUENTIAL OXYGEN AND NITROGEN ION-IMPLANTATION IN SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 58 (02): : 191 - 193
- [9] Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon Semiconductors, 1998, 32 : 1261 - 1265
- [10] FTIR and RBS study of ion-beam synthesized buried silicon oxide layers NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (08): : 1443 - 1446