A C-shaped nanoaperture Vertical-Cavity Surface-Emitting Laser for high-density near-field optical data storage

被引：4

作者：

Rao, Zhilong ^{[1
]}

Matteo, Joseph A. ^{[1
]}

Hesselink, Lambertus ^{[1
]}

Harris, James S. ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

VERTICAL-CAVITY SURFACE-EMITTING LASERS X | 2006年 / 6132卷

关键词：

VCSEL; polarization; nanoaperture; near field; data storage;

D O I：

10.1117/12.645083

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We designed and demonstrated a unique C-shaped nanoaperture (C-aperture) Vertical-Cavity Surface-Emitting Laser with an estimated maximum net power of 113 mu W coming from a 70nm C-aperture. Simulation shows the near-field FWHM spot size at 30nm away from the C-aperture is 94nm and 108nm in X and Y direction. We estimate the peak near-field intensity from the C-aperture VCSEL to be as high as 13.7mW/mu m(2). This high intensity and small spot size is promising to realize high-density near-field optical data storage.

引用

页数：6

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