A C-shaped nanoaperture Vertical-Cavity Surface-Emitting Laser for high-density near-field optical data storage

被引：4
|
作者：
Rao, Zhilong [1 ]
Matteo, Joseph A. [1 ]
Hesselink, Lambertus [1 ]
Harris, James S. [1 ]
机构：
[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源：
VERTICAL-CAVITY SURFACE-EMITTING LASERS X | 2006年 / 6132卷
关键词：
VCSEL; polarization; nanoaperture; near field; data storage;
D O I：
10.1117/12.645083
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We designed and demonstrated a unique C-shaped nanoaperture (C-aperture) Vertical-Cavity Surface-Emitting Laser with an estimated maximum net power of 113 mu W coming from a 70nm C-aperture. Simulation shows the near-field FWHM spot size at 30nm away from the C-aperture is 94nm and 108nm in X and Y direction. We estimate the peak near-field intensity from the C-aperture VCSEL to be as high as 13.7mW/mu m(2). This high intensity and small spot size is promising to realize high-density near-field optical data storage.
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收藏
页数：6
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