Growth temperature dependences of InN films grown by MOCVD

被引：20
|
作者：
Yang, Cuibai [1 ]
Wang, Xiaoliang [1 ,2 ]
Xiao, Hongling [1 ]
Zhang, Xiaobin [1 ]
Hua, Guoxin [1 ]
Ran, Junxue [1 ]
Wang, Cuimei [1 ]
Li, Jianping [1 ]
Li, Jinmin [1 ]
Wang, Zhanguo [2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期
关键词：
InN; MOCVD; Mobility;
D O I：
10.1016/j.apsusc.2008.09.013
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH(3), which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：3149 / 3152
页数：4
相关论文
共 50 条
  • [41] Temperature dependence of the optical properties for InN films grown by RF-MBE
    Ishitani, Y
    Xu, K
    Terashima, W
    Masuyama, H
    Yoshitani, M
    Hashimoto, N
    Che, SB
    Yoshikawa, A
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 207 - 212
  • [42] Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD
    Mulyanti, Budi
    Subagio, A.
    Arsyad, F. S.
    Arifin, P.
    Barmawi, M.
    Irzaman
    Jamal, Z.
    Hashim, U.
    JOURNAL OF MATHEMATICAL AND FUNDAMENTAL SCIENCES, 2008, 40 (02) : 97 - 108
  • [43] Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD
    Buegler, Max
    Gamage, Sampath
    Atalay, R.
    Wang, J.
    Senevirathna, M. K. I.
    Kirste, R.
    Xu, T.
    Jamil, M.
    Ferguson, I.
    Tweedie, J.
    Collazo, R.
    Hoffmann, A.
    Sitar, Z.
    Dietz, N.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2059 - 2062
  • [44] Temperature dependence of refractive index in InN thin films grown by reactive sputtering
    Shen, W.Z. (wzshen@sjtu.edu.cn), 1600, American Institute of Physics Inc. (96):
  • [45] A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD
    Hsu, Lung-Hsing
    Kuo, Chien-Ting
    Cheng, Yuh-Jen
    Chen, Kuan-Chao
    Kuo, Hao-Chung
    Lin, Shih-Yen
    Lin, Chien-Chung
    2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016,
  • [46] The high mobility InN film grown by MOCVD with GaN buffer layer
    Xie, Z. L.
    Zhang, R.
    Liu, B.
    Li, L.
    Liu, C. X.
    Xiu, X. Q.
    Zhao, H.
    Han, P.
    Gu, S. L.
    Shi, Y.
    Zheng, Y. D.
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 409 - 412
  • [47] EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GAAS-ON-SI
    NOZAKI, S
    NOTO, N
    OKADA, M
    EGAWA, T
    SOGA, T
    JIMBO, T
    UMENO, M
    CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 235 - 240
  • [48] Temperature dependences of the contact resistivity in ohmic contacts to n +-InN
    Sachenko, A. V.
    Belyaev, A. E.
    Boltovets, N. S.
    Brunkov, P. N.
    Jmerik, V. N.
    Ivanov, S. V.
    Kapitanchuk, L. M.
    Konakova, R. V.
    Klad'ko, V. P.
    Romanets, P. N.
    Saja, P. O.
    Safryuk, N. V.
    Sheremet, V. N.
    SEMICONDUCTORS, 2015, 49 (04) : 461 - 471
  • [49] Influence of substrate temperature on the properties of ZnO thin films grown by MOCVD technique
    Sun, Xiao-Hu
    Lei, Qing-Song
    Zeng, Xiang-Bin
    Xue, Jun-Ming
    Ju, Hong-Chao
    Chen, Yang-Yang
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2012, 41 (06): : 1494 - 1497
  • [50] Effect of growth temperature of an AlN intermediate layer on the growth mode of AlN grown by MOCVD
    Tian, W.
    Yan, W. Y.
    Dai, J. N.
    Li, S. L.
    Tian, Y.
    Hui, Xiong
    Zhang, J. B.
    Fang, Y. Y.
    Wu, Z. H.
    Chen, C. Q.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (06)
12345