Growth temperature dependences of InN films grown by MOCVD

被引：20
|
作者：
Yang, Cuibai [1 ]
Wang, Xiaoliang [1 ,2 ]
Xiao, Hongling [1 ]
Zhang, Xiaobin [1 ]
Hua, Guoxin [1 ]
Ran, Junxue [1 ]
Wang, Cuimei [1 ]
Li, Jianping [1 ]
Li, Jinmin [1 ]
Wang, Zhanguo [2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期
关键词：
InN; MOCVD; Mobility;
D O I：
10.1016/j.apsusc.2008.09.013
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the v scan's full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 degrees C to 560 degrees C, room-temperature Hall mobility increased from 98 cm(2)/V s to nearly 800 cm(2)/V s and carrier concentration dropped from 5.29 x 10(19) cm (3) to 0.93 x 10(19) cm (3). The higher growth temperature resulted in more efficient cracking of NH(3), which improved Hall mobility and decreased carrier concentration. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：3149 / 3152
页数：4
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