Chemical vapour deposition of II-VI semiconductor thin films using M[(TePiPr2)2N]2 (M = Cd, Hg) as single-source precursors

被引：49
|
作者：
Garje, SS
Ritch, JS
Eisler, DJ
Afzaal, M
O'Brien, P
Chivers, T
机构：
[1] Univ Manchester, Sch Chem, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Sch Mat, Manchester M13 9PL, Lancs, England
[3] Univ Calgary, Dept Chem, Calgary, AB T2N 1N4, Canada
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2006年 / 16卷 / 10期
关键词：
D O I：
10.1039/b515362j
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The aerosol-assisted chemical vapour deposition (AACVD) of CdTe has been carried out using Cd[(TePiPr(2))(2)N](2) at substrate temperatures between 375 and 475 degrees C. XRD shows the formation of cubic CdTe between 425 and 475 degrees C. At low deposition temperature (375 degrees C), a mixture of hexagonal tellurium and cubic cadmium telluride is observed. SEM images reveal that the growth temperatures do not have a profound effect on the morphologies of films. Surface analysis by XPS of films deposited at 475 degrees C showed the growth of Te-rich films. The AACVD of Hg[(TePiPr(2))(2)N](2) resulted in deposition of hexagonal tellurium.
引用
收藏
页码：966 / 969
页数：4
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