Low temperature, aerosol-assisted chemical vapor deposition (AACVD) of CdS, ZnS, and Cd1-xZnxS using monomeric single-source precursors: M(SOCCH3)(2)TMEDA

被引：35
|
作者：
Nyman, M
HampdenSmith, MJ
Duesler, EN
机构：
[1] Univ of New Mexico, Albuquerque, NM
来源：
CHEMICAL VAPOR DEPOSITION | 1996年 / 2卷 / 05期
关键词：
D O I：
10.1002/cvde.19960020503
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: Novel, monomeric single-source precursors for the CVD of metal sulfides, which are widely used in solar cell technology, are described. The Figure shows the molecular structure of M(SOCCH3)TMEDA, where TMEDA = N,N,N,N-tetramethylethylenediamine, for the Cd and Zn complexes. These compounds allow the lowest deposition temperatures so far reported for highly oriented crystalline, stoichiometric films.
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页码：171 / &
页数：5
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