Low temperature, aerosol-assisted chemical vapor deposition (AACVD) of CdS, ZnS, and Cd1-xZnxS using monomeric single-source precursors: M(SOCCH3)(2)TMEDA

被引:35
|
作者
Nyman, M
HampdenSmith, MJ
Duesler, EN
机构
[1] Univ of New Mexico, Albuquerque, NM
关键词
D O I
10.1002/cvde.19960020503
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Communication: Novel, monomeric single-source precursors for the CVD of metal sulfides, which are widely used in solar cell technology, are described. The Figure shows the molecular structure of M(SOCCH3)TMEDA, where TMEDA = N,N,N,N-tetramethylethylenediamine, for the Cd and Zn complexes. These compounds allow the lowest deposition temperatures so far reported for highly oriented crystalline, stoichiometric films.
引用
收藏
页码:171 / &
页数:5
相关论文
共 21 条
  • [21] Effect of deposition temperature on the growth of Y1Ba2Cu3O7−x thin film by aerosol assisted chemical vapor deposition using liquid solution sources
    Bo-Ryoun Kim
    Shafeeque G. Ansari
    Young-Soon Kim
    Gil-Sung Kim
    Sang-Chul Hwang
    Hee-Gyoun Lee
    Hyung-Shik Shin
    Korean Journal of Chemical Engineering, 2003, 20 : 772 - 775