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Top-gate organic field-effect transistors fabricated on paper with high operational stability
被引:31
|作者:
Wang, Cheng-Yin
[1
]
Fuentes-Hernandez, Canek
[1
]
Chou, Wen-Fang
[1
]
Kippelen, Bernard
[1
]
机构:
[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
关键词:
Organic field-effect transistors;
Top-gate geometry;
Paper;
Operational stability;
Flexibility;
POLY(VINYL ALCOHOL);
ELECTRONICS;
BLENDS;
D O I:
10.1016/j.orgel.2016.11.026
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We report on top-gate organic field-effect transistors (OFETs) fabricated on specialty paper, PowerCoat (TM) HD 230 from Arjowiggins Creative Papers coated with a buffer layer composed of a polyvinyl alcohol (PVA) and polyvinylpyrrolidine (PVP) blend. OFETs operate at low voltages and display average carrier mobility values of 1.7 +/- 1.1 x 10 x 1 cm(2)/Vs, average threshold voltage values of - 1.4 +/- 0.2 V, and average on/off current ratio of 10(5). OFETs also display excellent operational stability demonstrated by stable 1000 scans of the transfer characteristics and by stable on-currents displaying less than 6% change during a DC bias stress test at VDS = VGS = - 10 V for 1 h. Furthermore, OFETs on paper display a decrease of only 7% in their on-state current during a bending test. The performance of these OFETs on paper is comparable to that displayed by top-gate OFETs with the same geometry fabricated on glass substrates. (C) 2016 Elsevier B.V. All rights reserved.
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页码:340 / 344
页数:5
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