Top-gate organic field-effect transistors fabricated on paper with high operational stability

被引：31
|
作者：
Wang, Cheng-Yin [1 ]
Fuentes-Hernandez, Canek [1 ]
Chou, Wen-Fang [1 ]
Kippelen, Bernard [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
来源：
ORGANIC ELECTRONICS | 2017年 / 41卷
关键词：
Organic field-effect transistors; Top-gate geometry; Paper; Operational stability; Flexibility; POLY(VINYL ALCOHOL); ELECTRONICS; BLENDS;
D O I：
10.1016/j.orgel.2016.11.026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on top-gate organic field-effect transistors (OFETs) fabricated on specialty paper, PowerCoat (TM) HD 230 from Arjowiggins Creative Papers coated with a buffer layer composed of a polyvinyl alcohol (PVA) and polyvinylpyrrolidine (PVP) blend. OFETs operate at low voltages and display average carrier mobility values of 1.7 +/- 1.1 x 10 x 1 cm(2)/Vs, average threshold voltage values of - 1.4 +/- 0.2 V, and average on/off current ratio of 10(5). OFETs also display excellent operational stability demonstrated by stable 1000 scans of the transfer characteristics and by stable on-currents displaying less than 6% change during a DC bias stress test at VDS = VGS = - 10 V for 1 h. Furthermore, OFETs on paper display a decrease of only 7% in their on-state current during a bending test. The performance of these OFETs on paper is comparable to that displayed by top-gate OFETs with the same geometry fabricated on glass substrates. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：340 / 344
页数：5
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