Response to comments to "A distributive-transconductance model for border traps in IIIAV/High-k MOS capacitors"

被引：0
|
作者：
Zhang, Chen [1 ]
Xu, Min [1 ]
Ye, Peide D. [2 ]
Li, Xiuling [1 ]
机构：
[1] Univ Illinois, Elect & Comp Engn Dept, Urbana, IL 61822 USA
[2] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 11期
关键词：
Transconductance; Electron traps; Semiconductor device modeling; High K dielectric materials; MOS capacitors; Numerical models; Capacitance;
D O I：
10.1109/LED.2013.2282234
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1441 / 1441
页数：1
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