Buried InP/Airhole Photonic-Crystal Surface-Emitting Lasers

被引：16

作者：

Reuterskiold Hedlund, Carl ^{[1
]}

Martins De Pina, Joao ^{[1
]}

Kalapala, Akhil ^{[2
]}

Liu, Zhonghe ^{[2
]}

Zhou, Weidong ^{[2
]}

Hammar, Mattias ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Dept Elect Engn, Electrum 229, SE-16440 Kista, Sweden

[2] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 03期

基金：

瑞典研究理事会;

关键词：

epitaxial regrowth; metal-organic vapor-phase epitaxy; photonic-crystal surface-emitting lasers; HIGH-POWER;

D O I：

10.1002/pssa.202000416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Herein, the fabrication of InP photonic-crystal surface-emitting lasers (PCSELs) using a buried airhole/InP photonic-crystal (PC) layer based on an epitaxial regrowth process is reported. The formation of PC voids in the InP crystal structure requires a precise tuning of the metal-organic vapor-phase epitaxy (MOVPE) growth parameters, where the regrowth evolution is a function of temperature, V/III ratio, and growth rate. With precise control of these parameters, it is possible to alter the airhole shape from complete infilling to perfect encapsulation. Low-threshold lasing is demonstrated from these encapsulated airhole regrown PCSELs using optical pumping.

引用

页数：7

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