Buried InP/Airhole Photonic-Crystal Surface-Emitting Lasers

被引:16
|
作者
Reuterskiold Hedlund, Carl [1 ]
Martins De Pina, Joao [1 ]
Kalapala, Akhil [2 ]
Liu, Zhonghe [2 ]
Zhou, Weidong [2 ]
Hammar, Mattias [1 ]
机构
[1] KTH Royal Inst Technol, Dept Elect Engn, Electrum 229, SE-16440 Kista, Sweden
[2] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
基金
瑞典研究理事会;
关键词
epitaxial regrowth; metal-organic vapor-phase epitaxy; photonic-crystal surface-emitting lasers; HIGH-POWER;
D O I
10.1002/pssa.202000416
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Herein, the fabrication of InP photonic-crystal surface-emitting lasers (PCSELs) using a buried airhole/InP photonic-crystal (PC) layer based on an epitaxial regrowth process is reported. The formation of PC voids in the InP crystal structure requires a precise tuning of the metal-organic vapor-phase epitaxy (MOVPE) growth parameters, where the regrowth evolution is a function of temperature, V/III ratio, and growth rate. With precise control of these parameters, it is possible to alter the airhole shape from complete infilling to perfect encapsulation. Low-threshold lasing is demonstrated from these encapsulated airhole regrown PCSELs using optical pumping.
引用
收藏
页数:7
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