Pulse area control of exciton Rabi oscillation in InAs/GaAs single quantum dot

被引：7

作者：

Goshima, Keishiro

Komori, Kazuhiro

Yamauchi, Shohgo

Morohashi, Isao

Shikanai, Amane

Sugaya, Takayoshi

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Japan Scin & Technol Corp, JST, CREST, Tsukuba, Ibaraki 3050032, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

single quantum dot; MBE; InAs; photoluminescence; photoluminescence excitation; Rabi oscillation; transition dipole moment;

D O I：

10.1143/JJAP.45.3625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the optical properties of an exciton and a charged exciton in an InAs/GaAs single quantum dot (QD) with truncated pyramidal shape by microspectroscopy, and clarified the difference of sub-band structure between the exciton and the charged exciton in the same single QD. We observed the exciton Population of the excited states by monitoring the luminescence of the ground state exciton and succeeded in the experimental demonstration of Rabi oscillation of the exciton and the charged exciton. The transition dipole moments estimated from experimental results in a pure InAs QD are 32 and 40 D for the charged exciton and exciton, respectively, which were comparable to those in InGaAs QD.

引用

页码：3625 / 3628

页数：4

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