Pulse area control of exciton Rabi oscillation in InAs/GaAs single quantum dot

被引：7
|
作者：
Goshima, Keishiro
Komori, Kazuhiro
Yamauchi, Shohgo
Morohashi, Isao
Shikanai, Amane
Sugaya, Takayoshi
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Japan Scin & Technol Corp, JST, CREST, Tsukuba, Ibaraki 3050032, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期
关键词：
single quantum dot; MBE; InAs; photoluminescence; photoluminescence excitation; Rabi oscillation; transition dipole moment;
D O I：
10.1143/JJAP.45.3625
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the optical properties of an exciton and a charged exciton in an InAs/GaAs single quantum dot (QD) with truncated pyramidal shape by microspectroscopy, and clarified the difference of sub-band structure between the exciton and the charged exciton in the same single QD. We observed the exciton Population of the excited states by monitoring the luminescence of the ground state exciton and succeeded in the experimental demonstration of Rabi oscillation of the exciton and the charged exciton. The transition dipole moments estimated from experimental results in a pure InAs QD are 32 and 40 D for the charged exciton and exciton, respectively, which were comparable to those in InGaAs QD.
引用
收藏
页码：3625 / 3628
页数：4
相关论文
共 50 条
  • [21] Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm
    薛永洲
    陈泽升
    倪海桥
    牛智川
    江德生
    窦秀明
    孙宝权
    ChinesePhysicsB, 2017, 26 (08) : 189 - 192
  • [22] Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm
    Xue, Yong-Zhou
    Chen, Ze-Sheng
    Ni, Hai-Qiao
    Niu, Zhi-Chuan
    Jiang, De-Sheng
    Dou, Xiu-Ming
    Sun, Bao-Quan
    CHINESE PHYSICS B, 2017, 26 (08)
  • [23] Exciton energy of the InAs/GaAs self-assembled quantum dot in a semiconductor microcavity
    Pan, LX
    Li, SS
    Xia, JB
    CHINESE PHYSICS, 2001, 10 (07): : 655 - 657
  • [24] The role of dot height in determining exciton lifetimes in shallow InAs/GaAs quantum dots
    Campbell-Ricketts, T. E. J.
    Kleemans, N. A. J. M.
    Notzel, R.
    Silov, A. Yu.
    Koenraad, P. M.
    APPLIED PHYSICS LETTERS, 2010, 96 (03)
  • [25] InAs/GaAs quantum dot lasers
    Schmidt, OG
    Kirstaedter, N
    Ledentsov, NN
    Bimberg, D
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Maximov, MV
    Kopev, PS
    Alferov, ZI
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 727 - 730
  • [26] Intensity Noise and Pulse Oscillations of an InAs/GaAs Quantum Dot Laser on Germanium
    Zhou, Yue-Guang
    Duan, Jianan
    Huang, Heming
    Zhao, Xu-Yi
    Cao, Chun-Fang
    Gong, Qian
    Grillot, Frederic
    Wang, Cheng
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2019, 25 (06)
  • [27] Resonant emission of a single InAs/GaAs quantum dot in a waveguiding configuration
    Melet, Romain
    Grousson, Roger
    Voliotis, Valia
    Roditchev, Dimitri
    Lernaitre, Aristide
    Martinez, Anthony
    Ramdane, Abderrahim
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 913 - +
  • [28] Fock-Darwin spectrum of a single InAs/GaAs quantum dot
    Babinski, A.
    Potemski, M.
    Raymond, S.
    Lapointe, J.
    Wasilewski, Z. R.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 3748 - +
  • [29] Power broadening of the exciton linewidth in a single InGaAs/GaAs quantum dot
    Stufler, S
    Ester, P
    Zrenner, A
    Bichler, M
    APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4202 - 4204
  • [30] Single-exciton energy shell structure in InAs/GaAs quantum dots
    Awirothananon, S.
    Raymond, S.
    Studenikin, S.
    Vachon, M.
    Render, W.
    Sachrajda, A.
    Wu, X.
    Babinski, A.
    Potemski, M.
    Fafard, S.
    Cheng, S. J.
    Korkusinski, M.
    Hawrylak, P.
    PHYSICAL REVIEW B, 2008, 78 (23):
12345