Transverse piezoelectric properties of {110}-oriented PLZT thin films

Preferentially {110}-oriented thin films of lead lanthanum zirconate titanate, (Pb, La) (Zr, Ti)O-3 [PLZT] having compositions (7/65/35), (7/60/40) and (7/56/44) across the morphotropic phase boundary with a thickness of 1.5 mu m were prepared on platinised silicon substrates (111) Pt/Ti/SiO2/Si by sol-gel spin coating technique. The crystallographic orientation and crystalline phases were analysed by X-ray diffraction and Raman spectroscopy respectively. The dependence of the transverse piezoelectric coefficient, of the PLZT thin films on their composition and texture have been investigated. PLZT (7/60/40) thin films having a higher tetragonal content was found to exhibit optimum piezoelectric characteristics. By combining the results obtained from the dielectric and polarisation-electric field (P-E) studies, the domain switching mechanism responsible for have been established.