Transverse piezoelectric properties of {110}-oriented PLZT thin films

被引：2

作者：

Priya, S. Laxmi ^{[1
]}

Kumar, V. ^{[1
]}

Teramoto, Takuya ^{[2
]}

Kanno, Isaku ^{[2
]}

机构：

[1] Govt India, Minist Commun & Informat Technol, Dept Informat Technol, C MET,Sci Soc, Trichur, Kerala, India

[2] Kobe Univ, Mech Engn, Kobe, Hyogo, Japan

来源：

INTEGRATED FERROELECTRICS | 2018年 / 192卷 / 01期

基金：

日本科学技术振兴机构;

关键词：

Piezoelectricity; thin films; domain structure; crystallographic orientation; FABRICATION; CERAMICS; DEPOSITION;

D O I：

10.1080/10584587.2018.1521659

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Preferentially {110}-oriented thin films of lead lanthanum zirconate titanate, (Pb, La) (Zr, Ti)O-3 [PLZT] having compositions (7/65/35), (7/60/40) and (7/56/44) across the morphotropic phase boundary with a thickness of 1.5 mu m were prepared on platinised silicon substrates (111) Pt/Ti/SiO2/Si by sol-gel spin coating technique. The crystallographic orientation and crystalline phases were analysed by X-ray diffraction and Raman spectroscopy respectively. The dependence of the transverse piezoelectric coefficient, of the PLZT thin films on their composition and texture have been investigated. PLZT (7/60/40) thin films having a higher tetragonal content was found to exhibit optimum piezoelectric characteristics. By combining the results obtained from the dielectric and polarisation-electric field (P-E) studies, the domain switching mechanism responsible for have been established.

引用

页码：113 / 120

页数：8

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