Tin-powder Mediated Facile Route for the Reduction of Graphene Oxide

被引：0
|
作者：
Kim, Nam Hoon [1 ]
Kuila, Tapas [2 ]
Zhang, Chunfei [1 ]
Lee, Joong Hee [1 ,3 ]
机构：
[1] Chonbuk Natl Univ, Dept BIN Fus Technol, WCU Program, Jeonju 561756, Jeonbuk, South Korea
[2] Council Sci & Ind Res CSIR, CSIR Cent Mech Engn Res Inst, Surface Engn & Tribol Div, Bangalore, Karnataka, India
[3] Chonbuk Natl Univ, Dept Polymer & Nano Sci & Technol, BIN Fusion Team, Jeonju 561756, South Korea
来源：
MULTI-FUNCTIONAL MATERIALS AND STRUCTURES IV | 2013年 / 747卷
基金：
新加坡国家研究基金会;
关键词：
Graphene oxide; Tin-powder; Crystalline graphene; X-ray photoelectron spectroscopy;
D O I：
10.4028/www.scientific.net/AMR.747.238
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A facile approach for the reduction of graphene oxide (GO) using of Tin (Sn) powder and dilute hydrochloric acid at room temperature (RT) and at 50 degrees C upto 0.5-3 h has been reported. The as-prepared high quality crystalline graphene has been characterized using various analytical techniques. The rate of reduction scales with the reaction time for both RT and 50 degrees C as evidenced from electrical conductivity data. The graphene samples reduced at RT shows high electrical conductivity value due to the presence of un-reacted Sn-particles, resulting the enhancement in the However, the graphene prepared at 50 degrees C shows low electrical conductivity in comparison to the room temperature reduced graphene. XPS elemental analysis is in good agreement with this observation.
引用
收藏
页码：238 / +
页数：2
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