Tin-powder Mediated Facile Route for the Reduction of Graphene Oxide

被引：0

作者：

Kim, Nam Hoon ^{[1
]}

Kuila, Tapas ^{[2
]}

Zhang, Chunfei ^{[1
]}

Lee, Joong Hee ^{[1
,3
]}

机构：

[1] Chonbuk Natl Univ, Dept BIN Fus Technol, WCU Program, Jeonju 561756, Jeonbuk, South Korea

[2] Council Sci & Ind Res CSIR, CSIR Cent Mech Engn Res Inst, Surface Engn & Tribol Div, Bangalore, Karnataka, India

[3] Chonbuk Natl Univ, Dept Polymer & Nano Sci & Technol, BIN Fusion Team, Jeonju 561756, South Korea

来源：

MULTI-FUNCTIONAL MATERIALS AND STRUCTURES IV | 2013年 / 747卷

基金：

新加坡国家研究基金会;

关键词：

Graphene oxide; Tin-powder; Crystalline graphene; X-ray photoelectron spectroscopy;

D O I：

10.4028/www.scientific.net/AMR.747.238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A facile approach for the reduction of graphene oxide (GO) using of Tin (Sn) powder and dilute hydrochloric acid at room temperature (RT) and at 50 degrees C upto 0.5-3 h has been reported. The as-prepared high quality crystalline graphene has been characterized using various analytical techniques. The rate of reduction scales with the reaction time for both RT and 50 degrees C as evidenced from electrical conductivity data. The graphene samples reduced at RT shows high electrical conductivity value due to the presence of un-reacted Sn-particles, resulting the enhancement in the However, the graphene prepared at 50 degrees C shows low electrical conductivity in comparison to the room temperature reduced graphene. XPS elemental analysis is in good agreement with this observation.

引用

页码：238 / +

页数：2

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