Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus

被引：3
|
作者：
Hussnain, A. [1 ,2 ]
Rawat, R. S. [1 ]
Ahmad, R. [3 ]
Umar, Z. A. [2 ]
Hussain, T. [3 ]
Lee, P. [1 ]
Chen, Z. [4 ]
机构：
[1] Nanyang Technol Univ, Natl Inst Educ, Nat Sci & Sci Educ, Singapore 637616, Singapore
[2] Govt Coll Univ, Dept Phys, Lahore 54000, Pakistan
[3] Govt Coll Univ, Ctr Adv Studies Phys, Lahore 54000, Pakistan
[4] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2015年 / 170卷 / 7-8期
关键词：
dense plasma focus; tungsten nitride; thin film; mechanical properties; XPS; ENERGETIC ION IRRADIATION; TRIBOLOGICAL CHARACTERIZATION; PHASE-TRANSITION; DEPOSITION; DEVICE; COATINGS; TITANIUM; BEAMS;
D O I：
10.1080/10420150.2015.1052435
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Nano-structure thin film of tungsten nitride was deposited onto Si-substrate at room temperature using Mather-type plasma focus (3.3kJ) machine. Substrate was exposed against 10, 20, 30, and 40 deposition shots and its corresponding effect on structure, morphology, conductivity and nano-hardness has been systematically studied. The X-ray diffractormeter spectra of the exposed samples show the presence of various phases of WN and WN2 that depends on number of deposition shots. Surface morphological study revealed the uniform distribution of nano-sized grains on deposited film surface. Hardness and conductivity of exposed substrate improved with higher deposition shots. X-ray photo-electron spectroscopy survey scan of 40 deposition shots confirmed the elemental presence of W and N on Si-substrate.
引用
收藏
页码：557 / 566
页数：10
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