共 50 条
- [1] OXIDATION PROPERTIES OF SILICON-NITRIDE THIN-FILMS FABRICATED BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (08): : 1401 - 1405
- [2] FABRICATION OF SiN FILMS BY DOUBLE TUBED COAXIAL LINE TYPE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION. Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (, 1987, E70 (04): : 334 - 335
- [3] Photoluminescence from thermally oxidized hydrogenated amorphous silicon nanoball films fabricated by double-tubed-coaxial-line-type microwave plasma chemical vapor deposition system JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (12): : 6862 - 6867
- [5] Boron nitride thin films by microwave ECR plasma chemical vapor deposition 1600, Publ by Elsevier Sequoia SA, Lausanne 1, Switz (235): : 1 - 2
- [6] Photoluminescence from a:Si-H nanoball films fabricated by double tubed coaxial line type microwave plasma CVD system PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 1107 - 1114
- [8] Crystalline carbon nitride thin films deposited by microwave plasma chemical vapor deposition CHINESE PHYSICS, 2000, 9 (07): : 545 - 549
- [9] Characterization of carbon nitride thin films deposited by microwave plasma chemical vapor deposition SURFACE & COATINGS TECHNOLOGY, 2000, 127 (2-3): : 260 - 265
- [10] Effect of silicon impurity on carbon nitride films prepared by microwave plasma chemical vapor deposition MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 85 (01): : 38 - 42