Oxidation properties of silicon nitride thin films fabricated by double tubed coaxial line type microwave plasma chemical vapor deposition

被引:0
|
作者
Kato, Isamu [1 ]
Numada, Kouji [1 ]
Kiyota, Yukihiro [1 ]
机构
[1] Waseda Univ, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 08期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
8
引用
收藏
页码:1401 / 1405
相关论文
共 50 条
  • [21] Control of orientation for polycrystalline silicon thin films fabricated from fluorinated source gas by microwave plasma enhanced chemical vapor deposition
    Nakahata, Kouichi
    Miida, Atsushi
    Kamiya, Toshio
    Maeda, Yoshiteru
    Fortmann, Charles M.
    Shimizu, Isamu
    1998, JJAP, Tokyo, Japan (37):
  • [22] Control of orientation for polycrystalline silicon thin films fabricated from fluorinated source gas by microwave plasma enhanced chemical vapor deposition
    Nakahata, K
    Miida, A
    Kamiya, T
    Maeda, Y
    Fortmann, CM
    Shimizu, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (9AB): : L1026 - L1029
  • [23] Crystalline carbon nitride films grown by microwave plasma chemical vapor deposition
    Zheng, WT
    Wang, X
    Ding, T
    Li, XT
    Fei, WD
    Sakamoto, Y
    Kajinuma, K
    Watanabe, H
    Takaya, M
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (6-7): : 1091 - 1095
  • [24] Microwave plasma chemical vapor deposition of graphitic carbon thin films
    Marcinek, Marek
    Hardwick, Laurence J.
    Zukowska, Grazyna Z.
    Kostecki, Robert
    CARBON, 2010, 48 (05) : 1552 - 1557
  • [25] Ultrafast deposition of silicon nitride and semiconductor silicon thin films by hot wire chemical vapor deposition
    Schropp, R. E. I.
    van der Werf, C. H. M.
    Verlaan, V.
    Rath, J. K.
    Li, H.
    THIN SOLID FILMS, 2009, 517 (10) : 3039 - 3042
  • [26] Regularities of remote plasma enhanced chemical vapor deposition of silicon nitride films
    Alexandrov, S. E.
    RUSSIAN JOURNAL OF GENERAL CHEMISTRY, 2015, 85 (05) : 1238 - 1251
  • [27] Regularities of remote plasma enhanced chemical vapor deposition of silicon nitride films
    S. E. Alexandrov
    Russian Journal of General Chemistry, 2015, 85 : 1238 - 1251
  • [28] REMOTE PLASMA CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS
    ALEXANDROV, SE
    KOVALGIN, AY
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C2): : 847 - 847
  • [29] REMOTE PLASMA CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS
    ALEXANDROV, SE
    KOVALGIN, AY
    JOURNAL DE PHYSIQUE III, 1992, 2 (08): : 1421 - 1429
  • [30] TOTAL PRESSURE EFFECTS ON THE PROPERTIES OF SILICON-NITRIDE FILMS FABRICATED BY PHOTOENHANCED CHEMICAL-VAPOR-DEPOSITION
    YAMAMOTO, S
    MIGITAKA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (9A): : 5005 - 5011