A compendium of Single Event Transient data

被引：5

作者：

Savage, MW ^{[1
]}

Turflinger, T ^{[1
]}

Howard, JW ^{[1
]}

Buchner, S ^{[1
]}

机构：

[1] NAVSEA Surface Warfare Ctr Div, Crane, IN 47522 USA

来源：

2001 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2001年

关键词：

D O I：

10.1109/REDW.2001.960460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a compendium on observed Single Event Transients on analog and digital circuits. Both the data and the test methods used are presented.

引用

页码：134 / 141

页数：8

共 50 条

[41] DATA SHEET COMPENDIUM
LAW, R
BRITISH MEDICAL JOURNAL, 1974, 3 (5934): : 806 - 806
[42] Low energy single event upset/single event transient-tolerant latch for deep subMicron technologies
Fazeli, M.
Miremadi, S. G.
Ejlali, A.
Patooghy, A.
IET COMPUTERS AND DIGITAL TECHNIQUES, 2009, 3 (03): : 289 - 303
[43] Single Event Transient Mitigation in Cache Memory using Transient Error Checking Circuits
Yao, Xiaoyin
Clark, Lawrence T.
Patterson, Dan W.
Holbert, Keith E.
IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE 2010, 2010,
[44] A single event transient detector in SRAM-based FPGAs
Xu, Xiumin
Liang, Huaguo
Huang, Zhengfeng
Jiang, Cuiyun
Lu, Yingchun
Yan, Aibin
Ni, Tianming
Yi, Maoxiang
IEICE ELECTRONICS EXPRESS, 2017, 14 (12):
[45] Single event transient effects on charge redistribution SAR ADCs
Becker, Thales E.
Lanot, Alisson J. C.
Cardoso, Guilherme S.
Balen, Tiago R.
MICROELECTRONICS RELIABILITY, 2017, 73 : 22 - 35
[46] Digital single event transient trends with technology node scaling
Benedetto, J. M.
Eaton, P. H.
Mavis, D. G.
Gadlage, M.
Turflinger, T.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) : 3462 - 3465
[47] A new methodology for single event transient suppression in flash FPGAs
Smith, Farouk
MICROPROCESSORS AND MICROSYSTEMS, 2013, 37 (03) : 313 - 318
[48] Characterization of Single Event Transient Effects in Standard Delay Cells
Andjelkovic, Marko
Schrape, Oliver
Breitenreiter, Anselm
Krstic, Milos
Kraemer, Rolf
2020 27TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2020,
[49] Single Event Transient acquisition and mapping for space device Characterization
Pilia, Roberta
Bascoul, Guillaume
Sanchez, Kevin
Mura, Giovanna
Infante, Fulvio
MICROELECTRONICS RELIABILITY, 2016, 64 : 73 - 78
[50] Effect of ion position on single-event transient current
Japan Atomic Energy Inst, Gunma, Japan
Nucl Instrum Methods Phys Res Sect B, 1-4 (486-490):

← 1 2 3 4 5 →