A disorder induced field effect transistor in bilayer and trilayer graphene

被引：6

作者：

Xu, Dongwei ^{[1
]}

Liu, Haiwen ^{[2
,3
]}

Sacksteder, Vincent ^{[2
]}

Song, Juntao ^{[4
,5
]}

Jiang, Hua ^{[3
,6
]}

Sun, Qing-feng ^{[2
]}

Xie, X. C. ^{[3
]}

机构：

[1] Oklahoma State Univ, Dept Phys, Stillwater, OK 74078 USA

[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[3] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China

[4] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China

[5] Hebei Normal Univ, Hebei Adv Thin Film Lab, Shijiazhuang 050024, Hebei, Peoples R China

[6] Soochow Univ, Dept Phys, Suzhou 215006, Peoples R China

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2013年 / 25卷 / 10期

基金：

美国能源部;

关键词：

TUNABLE BAND-GAP; TRANSPORT;

D O I：

10.1088/0953-8984/25/10/105303

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene and gapped bilayer graphene.

引用

页数：11

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