Mechanically-Induced Resistive Switching in Ferroelectric Tunnel Junctions

被引：55
|
作者：
Lu, H. [1 ,2 ]
Kim, D. J. [1 ,2 ]
Bark, C. -W. [3 ]
Ryu, S. [3 ]
Eom, C. B. [3 ]
Tsymbal, E. Y. [1 ,2 ]
Gruverman, A. [1 ,2 ]
机构：
[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA
[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
来源：
NANO LETTERS | 2012年 / 12卷 / 12期
基金：
美国国家科学基金会;
关键词：
Resistive switching; flexoelectric effect; ferroelectric; tunnel junction; POLARIZATION; ELECTRORESISTANCE; FILMS;
D O I：
10.1021/nl303396n
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Recent advances in atomic-precision processing of oxide ferroelectrics-materials with a stable polarization that can be switched by an external electric field have generated considerable interest due to rich physics associated with their fundamental properties and high potential for application in devices with enhanced functionality. One of the particularly promising phenomena is the tunneling electro-resistance (TER) effect polarization-dependent bistable resistance behavior of ferroelectric tunnel junctions (FTJ). Conventionally, the application of an electric field above the coercive field of the ferroelectric barrier is required to observe this phenomenon. Here, we report a mechanically induced TER effect in ultrathin ferroelectric films of BaTiO3 facilitated by a large strain gradient induced by a tip of a scanning probe microscope (SPM). The obtained results represent a new paradigm for voltage-free control of electronic properties of nanoscale ferroelectrics and, more generally, complex oxide materials.
引用
收藏
页码：6289 / 6292
页数：4
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