Vibrations and mechanically-induced currents in nanopillars transistor

We report measurements and numerical modeling of nanopillars transistor in consisting of a multilayer SiNx/Si/SiNx structure and an electrical side gate for single-electron tunnel and Coulomb modulation at room temperature. The device has an ultrasmall quantum box of similar to 10 x 10 x 10 nm(3) and its manufacture is fully VLSI processing compatible. Finite-element analysis shows that the maximum deformation is similar to 3 angstrom and the corresponding elastic energy stored is similar to 50meV. The vibration frequency calculated is similar to 10(12) Hz in consistent with interference measurement. The current induced ranging from 1pA to 0.1pA is also consistent with experimental data, thus confirming that single-electron tunnel indeed can generate mechanical vibrations.