共 50 条
- [22] INFLUENCE OF SURFACE STEP DENSITY ON REFLECTION HIGH-ENERGY-ELECTRON DIFFRACTION SPECULAR INTENSITY DURING EPITAXIAL-GROWTH PHYSICAL REVIEW B, 1987, 36 (17): : 9312 - 9314
- [24] IMPORTANCE OF THE ADDITIONAL STEP-EDGE BARRIER IN DETERMINING FILM MORPHOLOGY DURING EPITAXIAL-GROWTH PHYSICAL REVIEW B, 1995, 51 (20): : 14790 - 14793
- [25] EFFECT OF STEP EDGE TRANSITION RATES AND ANISOTROPY IN SIMULATIONS OF EPITAXIAL-GROWTH JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 1545 - 1550
- [26] CORRECTION FOR THE INFLUENCE OF THERMAL-DIFFUSION DURING GROWTH OF EPITAXIAL SILICON LAYERS BY THE HYDRIDE PROCESSES JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1981, 54 (07): : 1369 - 1371
- [28] RHEED INTENSITY OSCILLATION DURING EPITAXIAL-GROWTH OF LAYERED MATERIALS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11): : L2096 - L2098