Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

被引：1

作者：

Xue, Qin ^{[1
,2
]}

Liu, Shouyin ^{[1
]}

Zhang, Shiming ^{[2
]}

Chen, Ping ^{[2
]}

Zhao, Yi ^{[2
]}

Liu, Shiyong ^{[2
]}

机构：

[1] Cent China Normal Univ, Dept Phys Sci & Technol, Wuhan 430079, Peoples R China

[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2013年 / 79卷

基金：

中国国家自然科学基金;

关键词：

Organic light-emitting devices; Mixed layer; MoOx; Buffer layer; DEVICES; ELECTRON; MOBILITY;

D O I：

10.1016/j.sse.2012.05.066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HIM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：75 / 78

页数：4

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