Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

被引：1
|
作者：
Xue, Qin [1 ,2 ]
Liu, Shouyin [1 ]
Zhang, Shiming [2 ]
Chen, Ping [2 ]
Zhao, Yi [2 ]
Liu, Shiyong [2 ]
机构：
[1] Cent China Normal Univ, Dept Phys Sci & Technol, Wuhan 430079, Peoples R China
[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2013年 / 79卷
基金：
中国国家自然科学基金;
关键词：
Organic light-emitting devices; Mixed layer; MoOx; Buffer layer; DEVICES; ELECTRON; MOBILITY;
D O I：
10.1016/j.sse.2012.05.066
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HIM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：75 / 78
页数：4
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