Effects of Doping of Intermediate Band Region on Intermediate Band Solar Cell Characteristics

被引：0

作者：

Sikder, Urmita ^{[1
]}

Rifat-Ul-Ferdous ^{[1
]}

Haque, Anisul ^{[2
]}

机构：

[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh

[2] East West Univ, Dept Elect & Elect Engn, Dhaka, Bangladesh

来源：

2012 7TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE) | 2012年

关键词：

Intermediate band solar cell (IBSC); conversion efficiency; IB occupancy; EFFICIENCY;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Effects of doping density (N-I) of the intermediate band region on the short-circuit current, open-circuit voltage and fill factor of an intermediate band solar cell (IBSC) are analyzed. The individual contribution of each of these variables on the conversion efficiency is investigated. The short-circuit current exhibits the maximum variation with N-I. Open-circuit voltage shows negligible dependence on N-I. Contrary to a previously published result, the fill factor in our case is not sensitive to the changes in N-I. For our choice of IBSC parameters, it is found that the maximum generation, as well as the maximum efficiency, occurs at a value of IB occupation probability which is much smaller than the commonly accepted value of 0.5.

引用

页数：4

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