Effects of Doping of Intermediate Band Region on Intermediate Band Solar Cell Characteristics

Effects of doping density (N-I) of the intermediate band region on the short-circuit current, open-circuit voltage and fill factor of an intermediate band solar cell (IBSC) are analyzed. The individual contribution of each of these variables on the conversion efficiency is investigated. The short-circuit current exhibits the maximum variation with N-I. Open-circuit voltage shows negligible dependence on N-I. Contrary to a previously published result, the fill factor in our case is not sensitive to the changes in N-I. For our choice of IBSC parameters, it is found that the maximum generation, as well as the maximum efficiency, occurs at a value of IB occupation probability which is much smaller than the commonly accepted value of 0.5.