Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

A series of 3C-SiC films with varied film thickness up to 17 pm have been grown on Si(I 00) by chemical vapor deposition, and studied by photoluminescence, Raman scattering, Fourier transform infrared transmission and reflectance measurements. Typical key behaviors on these optical spectra are investigated. Thinner (< 3 mu m) films have their optical spectral features, mainly associated with defects. High quality of single crystalline cubic SiC materials can be obtained from thicker (> 10 mu m) films, evidenced by optical spectra. There exists a tensile stress in the 3C-SiC film grown on Si, affecting greatly the optical features. Its measurements have leaded to a formulas on two deformation potentials, a and b. (c) 2005 Elsevier B.V. All rights reserved.