Optical properties of cubic SiC grown on Si substrate by chemical vapor deposition

被引：14

作者：

Feng, ZC ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 01期

关键词：

3C-SiC; Si; chemical vapor deposition; photoluminescene; Raman scattering; Fourier transform infrared spectroscopy;

D O I：

10.1016/j.mee.2005.10.044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A series of 3C-SiC films with varied film thickness up to 17 pm have been grown on Si(I 00) by chemical vapor deposition, and studied by photoluminescence, Raman scattering, Fourier transform infrared transmission and reflectance measurements. Typical key behaviors on these optical spectra are investigated. Thinner (< 3 mu m) films have their optical spectral features, mainly associated with defects. High quality of single crystalline cubic SiC materials can be obtained from thicker (> 10 mu m) films, evidenced by optical spectra. There exists a tensile stress in the 3C-SiC film grown on Si, affecting greatly the optical features. Its measurements have leaded to a formulas on two deformation potentials, a and b. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：165 / 169

页数：5

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