Degradation and Recovery Property of Schottky Barrier Height of AlGaN/GaN High Electron Mobility Transistors under Reverse AC Electrical Stress

被引：0

作者：

Shi, Lei ^{[1
]}

Feng, Shi-Wei ^{[1
]}

Guo, Chun-Sheng ^{[1
]}

Zhu, Hui ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

VOLTAGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We apply a reverse AC electrical stress on the Gate of AlGaN/GaN high electron mobility transistors (HEMTs). The change of Schottky Barrier height (SBH) with respect to time is derived from the I-V and C-V characteristics, respectively. The SBHs calculated from the two methods show similar decreasing trend. However, the one from I-V method recovers partly after stress is removed. The behaviour is attributed to the traps in AlGaN barrier and surface state of the gate as a result of the electrical stress, and the recovery of surface state is the main factor for the recovery phenomena.

引用

页码：275 / 277

页数：3

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