Degradation and Recovery Property of Schottky Barrier Height of AlGaN/GaN High Electron Mobility Transistors under Reverse AC Electrical Stress

被引：0
|
作者：
Shi, Lei [1 ]
Feng, Shi-Wei [1 ]
Guo, Chun-Sheng [1 ]
Zhu, Hui [1 ]
机构：
[1] Beijing Univ Technol, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
关键词：
VOLTAGE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We apply a reverse AC electrical stress on the Gate of AlGaN/GaN high electron mobility transistors (HEMTs). The change of Schottky Barrier height (SBH) with respect to time is derived from the I-V and C-V characteristics, respectively. The SBHs calculated from the two methods show similar decreasing trend. However, the one from I-V method recovers partly after stress is removed. The behaviour is attributed to the traps in AlGaN barrier and surface state of the gate as a result of the electrical stress, and the recovery of surface state is the main factor for the recovery phenomena.
引用
收藏
页码：275 / 277
页数：3
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