Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-ray Topography

被引：1

作者：

Suzuki, Hidetoshi ^{[1
]}

Sasaki, Takuo ^{[2
]}

Yamamoto, Susumu ^{[3
]}

Ohshita, Yoshio ^{[2
]}

Fukuyama, Atsuhiko ^{[3
]}

Yamaguchi, Masafumi ^{[2
]}

机构：

[1] Miyazaki Univ, Interdisciplinary Res Org, 1-1 Gakuen Kibanadai Nishi, Miyazaki 8892189, Japan

[2] Toyota Technol Inst, Nagoya, Aichi 4688511, Japan

[3] Miyazaki Univ, Fac Engn, Miyazaki, Japan

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

关键词：

MBE; X-ray topography; Heteroepitaxy;

D O I：

10.4028/www.scientific.net/MSF.725.85

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anisotropies in misfit dislocations (MDs) at the InGaAs/GaAs(001) interface are investigated by monochromatic X-ray topography (XRT). In the XRT image, white lines with different width are observed. These lines are related to a single MD line or several MD lines (MD bunching). The distribution, density, and number of MDs in one MD bunch are evaluated. The density of alpha-MDs is higher than that of beta-MDs. The MDs in one MD bunch distribute with two peaks in both in-plane directions. In a macroscopic view, the alpha-MD bunching lay more orderly than the beta-MD bunching, whereas in a microscopic view, alpha-MDs gather in a range narrower than beta-MDs.

引用

页码：85 / +

页数：2

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