In situ x-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation

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作者：
Barnett, S.J. [1 ]
Keir, A.M. [1 ]
Cullis, A.G. [1 ]
Johnson, A.D. [1 ]
Jefferson, J. [1 ]
Smith, G.W. [1 ]
Martint, T. [1 ]
Whitehowe, C.R. [1 ]
Lacey, G. [2 ]
Clark, G.F. [3 ]
Tanner, B.K. [4 ]
Spirkl, W. [4 ]
Lunn, B. [5 ]
Hoggt, J.C.H. [6 ]
Ashutt, P. [6 ]
Hagstont, W.E. [6 ]
Castelli, C.M. [7 ]
机构：
[1] DRA Malvern, St Andrews Road, Malvern, Worcestershire,WR14 3PS, United Kingdom
[2] Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield,S1 3JD, United Kingdom
[3] SERC Daresbury Laboratory, Daresbury, Warrington,WA4 4AD, United Kingdom
[4] Department of Physics, University of Durham, South Road, Durham,DH1 3CE, United Kingdom
[5] Department of Engineering Design and Research, University of Hull, Hull,HU6 7RX, United Kingdom
[6] Department of Applied Physics, University of Hull, Hull,HU6 7RX, United Kingdom
[7] Department of Electronics, University of York, Heslington, York,YO1 5DD, United Kingdom
来源：
Journal of Physics D: Applied Physics | 1995年 / 28卷 / 4A期
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