Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction

被引：3
|
作者：
Kaganer, VM [1 ]
Braun, W [1 ]
Jenichen, B [1 ]
Ploog, KH [1 ]
机构：
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PHYSICA B-CONDENSED MATTER | 2005年 / 357卷 / 1-2期
关键词：
synchrotron X-ray diffraction; molecular beam epitaxy; growth;
D O I：
10.1016/j.physb.2004.11.049
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Grazing incidence X-ray diffraction is used to study the GaAs(001) surface kinetics after a fractional number of monolayers is deposited by molecular beam epitaxy. We compare submonolayer depositions with the growth of non-integer number of layers. The coarsening exponent n of the mean 2D island size, l(t) similar to t(n), is found to be n = 0.93 +/- 0.18. This exponent is notably larger than the Lifsbitz-Slyozov exponent n = 1/3 expected for Ostwald ripening. A possible origin of this difference is discussed. (C) 2004 Elsevier B.V.. All rights reserved.
引用
收藏
页码：165 / 169
页数：5
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