Angular distributions of relativistic electrons under channeling in half-wavelength crystal and corresponding radiation

被引：14

作者：

Takabayashi, Y. ^{[1
]}

Bagrov, V. G. ^{[2
,3
]}

Bogdanov, O. V. ^{[4
]}

Pivovarov, Yu. L. ^{[2
,4
]}

Tukhfatullin, T. A. ^{[4
]}

机构：

[1] SAGA Light Source, Tosu, Saga 8410005, Japan

[2] Natl Res Tomsk State Univ, Tomsk 634050, Russia

[3] SB RAS, Inst High Current Elect, Tomsk 634055, Russia

[4] Natl Res Tomsk Polytech Univ, Tomsk 634050, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2015年 / 355卷

关键词：

Planar channeling; Channeling radiation; Half wavelength crystal; THIN SI;

D O I：

10.1016/j.nimb.2015.02.007

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

New experiments on channeling of 255 MeV electrons in a half-wavelength crystals (HWC) were performed at SAGA Light Source facilities. The simulations of trajectories for (220) and (111) planar channeling in Si were performed using the computer code BCM-1.0. Comparison of experimental and theoretical results shows a good agreement. The results of calculations of spectral distribution of radiation in forward direction (theta = 0 degrees) from 255 MeV electrons at (220) channeling in HWC silicon are presented. Qualitative comparison with radiation spectrum from an electron moving in an arc is performed. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：188 / 192

页数：5

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