PLANAR CHANNELING RADIATION FROM RELATIVISTIC ELECTRONS AND POSITRONS IN SILICON

被引：4
|
作者：
KUMAR, VH
PATHAK, AP
机构：
[1] School of Physics, University of Hyderabad
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1994年 / 182卷 / 01期
关键词：
D O I：
10.1002/pssb.2221820105
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The characteristics of the radiation emitted from relativistic positrons and electrons channeled alone the (110) plane in silicon single crystals is calculated using a realistic potential which is based on the atomic shell structure of target atoms. The results are compared with experimental results and are found to agree reasonably well.
引用
收藏
页码：51 / 57
页数：7
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