GaAs nanopillar-array solar cells employing in situ surface passivation

被引:194
|
作者
Mariani, Giacomo [1 ]
Scofield, Adam C. [1 ]
Hung, Chung-Hong [1 ]
Huffaker, Diana L. [1 ,2 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
来源
NATURE COMMUNICATIONS | 2013年 / 4卷
基金
美国国家科学基金会;
关键词
OPTICAL-ABSORPTION ENHANCEMENT; CORE-SHELL NANOWIRES; DOPANT DISTRIBUTION; SILICON NANOWIRES; LIGHT-ABSORPTION; WINDOW LAYER; PERFORMANCE;
D O I
10.1038/ncomms2509
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Arrays of III-V direct-bandgap semiconductor nanopillars represent promising photovoltaic candidates due to their inherent high optical absorption coefficients and minimized reflection arising from light trapping, efficient charge collection in the radial direction and the ability to synthesize them on low-cost platforms. However, the increased surface area results in surface states that hamper the power conversion efficiency. Here, we report the first demonstration of GaAs nanopillar-array photovoltaics employing epitaxial passivation with air mass 1.5 global power conversion efficiencies of 6.63%. High-bandgap epitaxial InGaP shells are grown in situ and cap the radial p-n junctions to alleviate surface-state effects. Under light, the photovoltaic devices exhibit open-circuit voltages of 0.44 V, short-circuit current densities of 24.3 mA cm(-2) and fill factors of 62% with high external quantum efficiencies > 70% across the spectral regime of interest. A novel titanium/indium tin oxide annealed alloy is exploited as transparent ohmic anode.
引用
收藏
页数:7
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