Modeling and Crosstalk Evaluation of 3-D TSV-Based Inductor With Ground TSV Shielding

被引：37
|
作者：
Mondal, Saikat [1 ]
Cho, Sang-Bock [2 ]
Kim, Bruce C. [1 ]
机构：
[1] CUNY, New York, NY 10031 USA
[2] Univ Ulsan, Dept Elect Engn, Ulsan 44610, South Korea
来源：
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 2017年 / 25卷 / 01期
关键词：
3-D full wave simulation; 3-D inductor; crosstalk; through-silicon-via (TSV) shielding; SPIRAL INDUCTORS; RF;
D O I：
10.1109/TVLSI.2016.2568755
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, we present a novel through-siliconvia (TSV)-based 3-D inductor structure with ground TSV shielding for better noise performance. In addition, a circuit model is proposed for the inductor, which can reduce the simulation time over finite-element-based 3-D full-wave simulation. Rigorous 3-D full-wave simulation is performed up to 10 GHz to validate the circuit model. The ground TSV-based 3-D inductor is found to be resilient to TSV-TSV crosstalk noise compared with conventional 3-D inductors. The simulation results revealed that more than -33 dB of isolation can be achieved at 2 GHz between the 3-D inductor and the noise probe.
引用
收藏
页码：308 / 318
页数：11
相关论文
共 50 条
  • [21] Power Distribution in TSV-Based 3-D Processor-Memory Stacks
    Satheesh, Suhas M.
    Salman, Emre
    IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2012, 2 (04) : 692 - 703
  • [22] STA Compatible Backend Design Flow for TSV-based 3-D ICs
    Kalargaris, Harry
    Chen, Yi-Chung
    Pavlidis, Vasilis F.
    PROCEEDINGS OF THE EIGHTEENTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED), 2017, : 186 - +
  • [23] Reliability Concerns of TSV-Based 3-D Integration: Impact of Interfacial Crack
    Kumari, Vandana
    Chandrakar, Shivangi
    Verma, Swati
    Majumder, Manoj Kumar
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2023, 13 (11): : 1734 - 1742
  • [24] Decoupling Capacitor Topologies for TSV-Based 3-D ICs With Power Gating
    Wang, Hailang
    Salman, Emre
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2015, 23 (12) : 2983 - 2991
  • [25] Frequency-Dependent Characteristics and Parametric Modeling of the Silicon Substrate in TSV-Based 3-D ICs
    Zhao, Yingbo
    Fan, Qingyang
    IEEE ACCESS, 2022, 10 : 134349 - 134355
  • [26] Modeling and optimization of noise coupling in TSV-based 3D ICs
    Zhao, Yingbo
    Yang, Yintang
    Dong, Gang
    IEICE ELECTRONICS EXPRESS, 2014, 11 (20):
  • [27] Dynamic data split: A crosstalk suppression scheme in TSV-based 3D IC
    Wang, Qin
    Chen, Zhenyang
    Jiang, Jianfei
    Guo, Zheng
    Mao, Zhigang
    INTEGRATION-THE VLSI JOURNAL, 2017, 59 : 23 - 30
  • [28] Robust TSV-based 3D NoC Design to Counteract Electromigration and Crosstalk Noise
    Das, Sourav
    Doppa, Janardhan Rao
    Pande, Partha Pratim
    Chakrabarty, Krishnendu
    PROCEEDINGS OF THE 2017 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE), 2017, : 1366 - 1371
  • [29] Measurements and Analysis of Substrate Noise Coupling in TSV-Based 3-D Integrated Circuits
    Araga, Yuuki
    Nagata, Makoto
    Van der Plas, Geert
    Marchal, Paul
    Libois, Michael
    La Manna, Antonio
    Zhang, Wenqi
    Beyer, Gerald
    Beyne, Eric
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2014, 4 (06): : 1026 - 1037
  • [30] An Effective Model for Evaluating Vertical Propagation Delay in TSV-based 3-D ICs
    Watanabe, Masayuki
    Niioka, Nanako
    Kobayashi, Tetsuya
    Karel, Rosely
    Fukase, Masa-aki
    Imai, Masashi
    Kurokawa, Atsushi
    PROCEEDINGS OF THE SIXTEENTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED 2015), 2015, : 514 - 518
12345