Comparison of X-band MESFET and HBT class-E power amplifiers for EER transmitters

被引：2
|
作者：
Pajic, S [1 ]
Wang, N [1 ]
Popovic, Z [1 ]
机构：
[1] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA
来源：
2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年
关键词：
MESFET power amplifiers; microwave power bipolar transistor amplifiers; microwave power amplifiers; microwave devices;
D O I：
10.1109/MWSYM.2005.1517144
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a comparison of hybrid microwave class-E power amplifiers (PAs) using two types of active devices: GaAs MESFET and InP DHBT. The active devices have comparable periphery, are capable of delivering 20-21 dBm of output power at 10 GHz, with drain (collector) efficiencies in the range of 65%. Both PAs are characterized for envelope elimination and restoration technique (EER). Power, gain and efficiency sweeps, AM-AM and AM-PM characteristics, frequency sweeps and drain (collector) bias modulation properties are presented for the MESFET and HBT class-E PA.
引用
收藏
页码：2031 / 2034
页数：4
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