Comparison of X-band MESFET and HBT class-E power amplifiers for EER transmitters

被引：2

作者：

Pajic, S ^{[1
]}

Wang, N ^{[1
]}

Popovic, Z ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA

来源：

2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年

关键词：

MESFET power amplifiers; microwave power bipolar transistor amplifiers; microwave power amplifiers; microwave devices;

D O I：

10.1109/MWSYM.2005.1517144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comparison of hybrid microwave class-E power amplifiers (PAs) using two types of active devices: GaAs MESFET and InP DHBT. The active devices have comparable periphery, are capable of delivering 20-21 dBm of output power at 10 GHz, with drain (collector) efficiencies in the range of 65%. Both PAs are characterized for envelope elimination and restoration technique (EER). Power, gain and efficiency sweeps, AM-AM and AM-PM characteristics, frequency sweeps and drain (collector) bias modulation properties are presented for the MESFET and HBT class-E PA.

引用

页码：2031 / 2034

页数：4

共 50 条

[31] Design Method for UHF Class-E Power Amplifiers
Lopez, Nestor D.
Hoversten, John
Popovic, Zoya
2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009, 2009, : 65 - 68
[32] Analytical design equations for Class-E power amplifiers
Acar, Mustafa
Annema, Anne Johan
Nauta, Bram
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2007, 54 (12) : 2706 - 2717
[33] Class-E cmos power amplifiers for RF applications
Hung, TT
El-Gamal, MN
PROCEEDINGS OF THE 2003 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL I: ANALOG CIRCUITS AND SIGNAL PROCESSING, 2003, : 449 - 452
[34] Load Mismatch Sensitivity of Class-E Power Amplifiers
Ghahremani, Ali
Annema, Anne-Johan
Nauta, Bram
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2019, 67 (01) : 216 - 230
[35] CLASS-E TUNED AMPLIFIERS IN POWER AMPLITUDE MODULATORS
Modzelewski, Juliusz
Mikolajewski, Miroslaw
2008 MIKON CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2008, : 145 - 148
[36] Nonlinear modeling of class-E microwave power amplifiers
Markovic, M
Kain, A
Popovic, Z
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 1999, 9 (02) : 93 - 103
[37] A low power CMOS transmitter with Class-E power amplifiers for positioning application in multi-band
Hsieh, Chia-Yu
Roeber, Juergen
Baenisch, Andreas
Hagelauer, Amelie
Ussmueller, Thomas
Weigel, Robert
2016 GERMAN MICROWAVE CONFERENCE (GEMIC), 2016, : 433 - 436
[38] LOW-VOLTAGE, HIGH-EFFICIENCY GAAS CLASS-E POWER-AMPLIFIERS FOR WIRELESS TRANSMITTERS
SOWLATI, T
SALAMA, CAT
SITCH, J
RABJOHN, G
SMITH, D
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (10) : 1074 - 1080
[39] GAAS HIGH-POWER X-BAND VERTICAL MESFET
CLARKE, RC
NATHANSON, HC
OAKES, JG
HARDISON, GT
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1709 - 1710
[40] An improved method of power control with CMOS class-E power amplifiers
Gao, Tongqiang
Zhang, Chun
Chi, Baoyong
Wang, Zhihua
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10, 2008, : 2306 - +

← 1 2 3 4 5 →