Anomalous positive microwave magnetoresistance of compensated Ge:Ga near the metal-insulator transition

The contactless technique of electron spin resonance was used to measure magnetoresistance (MR) phenomena in heavily doped and compensated Ge:Ga both in the insulator and metallic phases near the insulator-metal (IM) transition. The concentration dependency of the temperature power coefficient of the MR allows us to identify the effect origin versus the hole density. They are: the wave function shrinkage by magnetic field at p < 8.7 x 10(16) cm(-3); the weak localization regime of the quantum correction theory with the temperature depending diffusion coefficient at 8.7 x 10(16) < p < 1.5 x 10(17) cm(-3); and the same theory with the temperature independent diffusion coefficient at p > 1.5 x 10(17) cm(-3).